Monolithic integration of InP-based transistors on Si substrates using MBE
Identifieur interne : 000417 ( France/Analysis ); précédent : 000416; suivant : 000418Monolithic integration of InP-based transistors on Si substrates using MBE
Auteurs : RBID : Pascal:09-0227897Descripteurs français
- Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Transistor bipolaire hétérojonction, Epitaxie jet moléculaire, Couche épitaxique, Mécanisme croissance, Photodétecteur, Interface, Dislocation filetée, Densité dislocation, Microscopie électronique transmission, Résistivité couche, Phosphure d'indium, Silicium, Germanium, InP, Substrat silicium, Si, GaIn, 8115H, 8110A, 8560G, 6172L.
English descriptors
- KwdEn :
Abstract
We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBT) structures were successfully grown on Si-on-lattice-engineered- substrate (SOLES) and Ge-on-insulator-on-Si (GeOI/Si) substrates using molecular beam epitaxy. Structurally, the epiwafers exhibit sharp interfaces and a threading dislocation density of 3.5 x 107 cm-2 as measured by plan-view transmission electron microscopy. HBT devices fabricated on GeOI/Si substrates have current gain of 55-60 at a base sheet resistance of 650-700 Ω/sq, and ft and fmax of around 220 GHz. HBT structures with DC and RF performance similar to those grown on lattice-matched InP were also achieved on patterned SOLES substrates with growth windows as small as 15 x 15 μm2. These results demonstrate a promising path of heterogeneous integration and selective placement of III-V devices at arbitrary locations on Si CMOS wafers.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 005663
- to stream Main, to step Repository: 004F66
- to stream France, to step Extraction: 000417
Links to Exploration step
Pascal:09-0227897Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Monolithic integration of InP-based transistors on Si substrates using MBE</title><author><name sortKey="Liu, W K" uniqKey="Liu W">W. K. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IQE, Inc</s1><s2>Bethlehem, PA 18015</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion></affiliation></author><author><name sortKey="Lubyshev, D" uniqKey="Lubyshev D">D. Lubyshev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IQE, Inc</s1><s2>Bethlehem, PA 18015</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion></affiliation></author><author><name sortKey="Fastenau, J M" uniqKey="Fastenau J">J. M. Fastenau</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IQE, Inc</s1><s2>Bethlehem, PA 18015</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion></affiliation></author><author><name sortKey="Wu, Y" uniqKey="Wu Y">Y. Wu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IQE, Inc</s1><s2>Bethlehem, PA 18015</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Bethlehem, PA 18015</wicri:noRegion></affiliation></author><author><name sortKey="Bulsara, M T" uniqKey="Bulsara M">M. T. Bulsara</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Massachusetts Institute of Technology</s1><s2>Cambridge, MA</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Cambridge (Massachusetts)</settlement><region type="state">Massachusetts</region></placeName><orgName type="university">Massachusetts Institute of Technology</orgName></affiliation></author><author><name sortKey="Fitzgerald, E A" uniqKey="Fitzgerald E">E. A. Fitzgerald</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Massachusetts Institute of Technology</s1><s2>Cambridge, MA</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Cambridge (Massachusetts)</settlement><region type="state">Massachusetts</region></placeName><orgName type="university">Massachusetts Institute of Technology</orgName></affiliation></author><author><name sortKey="Urteaga, M" uniqKey="Urteaga M">M. Urteaga</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Teledyne Scientific Company</s1><s2>Thousand Oaks, CA</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Teledyne Scientific Company</wicri:noRegion></affiliation></author><author><name sortKey="Ha, W" uniqKey="Ha W">W. Ha</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Teledyne Scientific Company</s1><s2>Thousand Oaks, CA</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Teledyne Scientific Company</wicri:noRegion></affiliation></author><author><name sortKey="Bergman, J" uniqKey="Bergman J">J. Bergman</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Teledyne Scientific Company</s1><s2>Thousand Oaks, CA</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Teledyne Scientific Company</wicri:noRegion></affiliation></author><author><name sortKey="Brar, B" uniqKey="Brar B">B. Brar</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Teledyne Scientific Company</s1><s2>Thousand Oaks, CA</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Teledyne Scientific Company</wicri:noRegion></affiliation></author><author><name sortKey="Hoke, W E" uniqKey="Hoke W">W. E. Hoke</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Raytheon RF Components</s1><s2>Andover, MA</s2><s3>USA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Raytheon RF Components</wicri:noRegion></affiliation></author><author><name sortKey="Laroche, J R" uniqKey="Laroche J">J. R. Laroche</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Raytheon RF Components</s1><s2>Andover, MA</s2><s3>USA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Raytheon RF Components</wicri:noRegion></affiliation></author><author><name sortKey="Herrick, K J" uniqKey="Herrick K">K. J. Herrick</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Raytheon RF Components</s1><s2>Andover, MA</s2><s3>USA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Raytheon RF Components</wicri:noRegion></affiliation></author><author><name sortKey="Kazior, T E" uniqKey="Kazior T">T. E. Kazior</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Raytheon RF Components</s1><s2>Andover, MA</s2><s3>USA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Raytheon RF Components</wicri:noRegion></affiliation></author><author><name sortKey="Clark, D" uniqKey="Clark D">D. Clark</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Raytheon Systems Ltd., Glenrothes</s1><s2>Fife, Scotland</s2><s3>GBR</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Fife, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Smith, D" uniqKey="Smith D">D. Smith</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Raytheon Systems Ltd., Glenrothes</s1><s2>Fife, Scotland</s2><s3>GBR</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Fife, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Thompson, R F" uniqKey="Thompson R">R. F. Thompson</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Raytheon Systems Ltd., Glenrothes</s1><s2>Fife, Scotland</s2><s3>GBR</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Fife, Scotland</wicri:noRegion></affiliation></author><author><name sortKey="Drazek, C" uniqKey="Drazek C">C. Drazek</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>SOITEC, Parc Technologique des Fontaines, Bernin</s1><s2>Crolles</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>Crolles</wicri:noRegion><wicri:noRegion>Bernin</wicri:noRegion><wicri:noRegion>Crolles</wicri:noRegion></affiliation></author><author><name sortKey="Daval, N" uniqKey="Daval N">N. Daval</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>SOITEC, Parc Technologique des Fontaines, Bernin</s1><s2>Crolles</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>Crolles</wicri:noRegion><wicri:noRegion>Bernin</wicri:noRegion><wicri:noRegion>Crolles</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0227897</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0227897 INIST</idno><idno type="RBID">Pascal:09-0227897</idno><idno type="wicri:Area/Main/Corpus">005663</idno><idno type="wicri:Area/Main/Repository">004F66</idno><idno type="wicri:Area/France/Extraction">000417</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dislocation density</term><term>Epitaxial layers</term><term>Germanium</term><term>Growth mechanism</term><term>Heterojunction bipolar transistors</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Interfaces</term><term>Molecular beam epitaxy</term><term>Photodetectors</term><term>Sheet resistivity</term><term>Silicon</term><term>Threading dislocation</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Transistor bipolaire hétérojonction</term><term>Epitaxie jet moléculaire</term><term>Couche épitaxique</term><term>Mécanisme croissance</term><term>Photodétecteur</term><term>Interface</term><term>Dislocation filetée</term><term>Densité dislocation</term><term>Microscopie électronique transmission</term><term>Résistivité couche</term><term>Phosphure d'indium</term><term>Silicium</term><term>Germanium</term><term>InP</term><term>Substrat silicium</term><term>Si</term><term>GaIn</term><term>8115H</term><term>8110A</term><term>8560G</term><term>6172L</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBT) structures were successfully grown on Si-on-lattice-engineered- substrate (SOLES) and Ge-on-insulator-on-Si (GeOI/Si) substrates using molecular beam epitaxy. Structurally, the epiwafers exhibit sharp interfaces and a threading dislocation density of 3.5 x 10<sup>7</sup> cm<sup>-2</sup> as measured by plan-view transmission electron microscopy. HBT devices fabricated on GeOI/Si substrates have current gain of 55-60 at a base sheet resistance of 650-700 Ω/sq, and f<sub>t</sub> and f<sub>max</sub> of around 220 GHz. HBT structures with DC and RF performance similar to those grown on lattice-matched InP were also achieved on patterned SOLES substrates with growth windows as small as 15 x 15 μm<sup>2</sup>. These results demonstrate a promising path of heterogeneous integration and selective placement of III-V devices at arbitrary locations on Si CMOS wafers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>311</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Monolithic integration of InP-based transistors on Si substrates using MBE</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)</s1></fA09><fA11 i1="01" i2="1"><s1>LIU (W. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>LUBYSHEV (D.)</s1></fA11><fA11 i1="03" i2="1"><s1>FASTENAU (J. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>WU (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>BULSARA (M. T.)</s1></fA11><fA11 i1="06" i2="1"><s1>FITZGERALD (E. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>URTEAGA (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>HA (W.)</s1></fA11><fA11 i1="09" i2="1"><s1>BERGMAN (J.)</s1></fA11><fA11 i1="10" i2="1"><s1>BRAR (B.)</s1></fA11><fA11 i1="11" i2="1"><s1>HOKE (W. E.)</s1></fA11><fA11 i1="12" i2="1"><s1>LAROCHE (J. R.)</s1></fA11><fA11 i1="13" i2="1"><s1>HERRICK (K. J.)</s1></fA11><fA11 i1="14" i2="1"><s1>KAZIOR (T. E.)</s1></fA11><fA11 i1="15" i2="1"><s1>CLARK (D.)</s1></fA11><fA11 i1="16" i2="1"><s1>SMITH (D.)</s1></fA11><fA11 i1="17" i2="1"><s1>THOMPSON (R. F.)</s1></fA11><fA11 i1="18" i2="1"><s1>DRAZEK (C.)</s1></fA11><fA11 i1="19" i2="1"><s1>DAVAL (N.)</s1></fA11><fA12 i1="01" i2="1"><s1>WASILEWSKI (Z. R.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BERESFORD (R.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>IQE, Inc</s1><s2>Bethlehem, PA 18015</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Massachusetts Institute of Technology</s1><s2>Cambridge, MA</s2><s3>USA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Teledyne Scientific Company</s1><s2>Thousand Oaks, CA</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="04"><s1>Raytheon RF Components</s1><s2>Andover, MA</s2><s3>USA</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA14 i1="05"><s1>Raytheon Systems Ltd., Glenrothes</s1><s2>Fife, Scotland</s2><s3>GBR</s3><sZ>15 aut.</sZ><sZ>16 aut.</sZ><sZ>17 aut.</sZ></fA14><fA14 i1="06"><s1>SOITEC, Parc Technologique des Fontaines, Bernin</s1><s2>Crolles</s2><s3>FRA</s3><sZ>18 aut.</sZ><sZ>19 aut.</sZ></fA14><fA15 i1="01"><s1>National Research Council</s1><s3>CAN</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Brown University</s1><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA20><s1>1979-1983</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000184939900850</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0227897</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III-V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBT) structures were successfully grown on Si-on-lattice-engineered- substrate (SOLES) and Ge-on-insulator-on-Si (GeOI/Si) substrates using molecular beam epitaxy. Structurally, the epiwafers exhibit sharp interfaces and a threading dislocation density of 3.5 x 10<sup>7</sup> cm<sup>-2</sup> as measured by plan-view transmission electron microscopy. HBT devices fabricated on GeOI/Si substrates have current gain of 55-60 at a base sheet resistance of 650-700 Ω/sq, and f<sub>t</sub> and f<sub>max</sub> of around 220 GHz. HBT structures with DC and RF performance similar to those grown on lattice-matched InP were also achieved on patterned SOLES substrates with growth windows as small as 15 x 15 μm<sup>2</sup>. These results demonstrate a promising path of heterogeneous integration and selective placement of III-V devices at arbitrary locations on Si CMOS wafers.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A72L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Heterojunction bipolar transistors</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Photodétecteur</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Photodetectors</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Interface</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Interfaces</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Dislocation filetée</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Threading dislocation</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Dislocación aterrajada</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Densité dislocation</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Dislocation density</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Résistivité couche</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Sheet resistivity</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Germanium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Germanium</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Substrat silicium</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>GaIn</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8560G</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>6172L</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>166</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Molecular Beam Epitaxy</s1><s2>15</s2><s3>Vancouver CAN</s3><s4>2008-08-03</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000417 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 000417 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= France
|étape= Analysis
|type= RBID
|clé= Pascal:09-0227897
|texte= Monolithic integration of InP-based transistors on Si substrates using MBE
}}
| This area was generated with Dilib version V0.5.77. |  |